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Datasheet contains the design specifications for product development. Datasheet contains preliminary data; supplementary data will be. Symbol. Parameter. Value. Unit. VCBO. Collector-Emitter Voltage (IE = 0). V. VCEO. Collector-Emitter Voltage (IB = 0). V. VEBO. Emitter-Base Voltage (IC. SMBT A. 1. Oct NPN Silicon Switching Transistor. • High DC current gain: mA to mA. • Low collector-emitter saturation voltage.

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The situation worsen when all these china fake transistors crowded the whole market, there are no standardization at all. By using our site, you acknowledge that you have read and understand our Cookie PolicyPrivacy Policyand our Terms datashert Service. What do you think? To confirm, you can double check with the hFE function if your meter has that.

You can have up to 3 types of configurations. Submitted by webmaster on 11 December Home Questions Tags Users Unanswered.

Applications Can be used to switch high current upto mA loads Datashest can also be used in the various switching applications.

To bias a transistor we have to supply current to base pin, this current I B should be limited to 5mA. How to use 2NA This transistor like all can be used either as a switch or as an amplifier. When I apply a voltage between the 2222a 1 to 3, as soon as the voltage rises over about 8V, the current starts to flow, even when the base has no voltage pulled down or floatingand the transistors gets pretty hot.

But there are two important features that distinguish both. However one important thing to notice is the Base resistor a. Most 2Ns have the orientation which your diagram shows, where if the flat side is facing you, the pins are E-B-C respectively.

ST Microelectronics

Would you like to answer one of these unanswered questions instead? The Base-Emitter voltage of this transistor is 6V so you just have to supply this voltage across the base and emitter of the transistor to induce a base current into the transistor.


Would I reuse it? The slightly lower of the two voltages will correspond to the collector-base junctionand the other will be the emitter-base junction. The maximum amount of current that could flow through the Collector pin is mA, hence we cannot connect loads that consume more than mA using this transistor.

Complete Technical Details can be found at the 2NA datasheet given at the end of this page. With it wired the wrong way round the emitter is more positive than the collector and the base is reverse biased.

PN2222A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Hence the 2N pin-out is sadly not standardized. You have to try each of the three pins to the two others, with both polarities 6 pairs of tests.

It looks like a “diode”. The value for this resistor can be calculated using the formula.

2NA Pinout, Features, Equivalent & Datasheet

If I set up dztasheet circuit for a quick test, it seems that the datasheet or the transistor has the pins swapped. This is the pic of the transistor, as I understand that it should work, but it doesn’t it is always ‘on’ with 12V between the collector and the emitter with the base floating. I have used a base voltage of 5V and a value of 1K as current limiting resistor.

When this transistor is fully biased then it can allow a maximum of mA to flow across the collector and emitter. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around mV.

So if you looking for an NPN transistor that could switch loads of higher current then 2NA might the right choice for your project. To make things simple I have shown a simplified circuit to make a transistor as switch. TL — Programmable Reference Voltage.


Thank you for your interest in this question. I have a simple circuit to send current to a brushless fan running at 12V on the high side, using a NPN transistor 2NA:. Absolute maximum rating for emitter-base voltage is 6V hence the E-B junction broke down and started conducting. This transistor like all can be used either as a switch or as an amplifier.

This is true of almost all modern transistors a few are made more symmetrical. In actual circuit modifications might be required.

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Javier Loureiro 1 7 Zuofu 3, 2 15 The hFE is usually much higher datssheet properly connected than when collector and emitter are swapped. It can be even worse, since the On Semi PN has the conventional datashret, despite being the same manufacturer and mostly 22222a specifications: This is the picture of the datasheet for the pins: The base will show a diode connection to both other pins, in only one polarity.

If it is to replace a shorted transistor, we will never know if both are the same ebc configuration between your new 2N and the old 2N I have a simple circuit to send current to a brushless fan running at 12V on the high side, using a NPN transistor 2NA: Am I missing something here?

I am trying to figure out what is going on here. To distinguish collector from emitter, you look at the voltage shown in the diode function with the one successful test that found the base.

I don’t think so – throw it in the bin. This transistor will make it forward biased and thus closes the connection between collector and emitter.

No other pin will show that. Spehro Pefhany k 4